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[Analysis Case] Thermal Desorption Gas Analysis of SiN Film by TDS

It is possible to evaluate the surface-adsorbed gas on the thin film and the desorbed gas from within the film.

The TDS analysis results regarding the SiN film on the Si substrate are presented. In the low-temperature range up to around 100°C, there is little desorption, indicating that there were few adsorbed components on the surface of the sample. On the other hand, as the temperature of the sample increases, it can be observed that m/z 2 (H2), m/z 18 (H2O), and m/z 27 (C2H3: organic fragment components) are being desorbed. TDS analysis conducted under high vacuum (1E-7 Pa) is effective for evaluating the adsorbed gas components on the film surface and trace gas components within the film.

  • Contract Analysis

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[Analysis Case] Estimation of Detachment Components by TDS

We will compare the outgassing patterns of multiple masses.

The analysis results of TDS may show multiple components detected for a single mass-to-charge ratio (m/z). Even in such cases, it is possible to estimate the components desorbed by heating by measuring multiple masses and comparing the desorption patterns. Using the TDS analysis results of W films on Si substrates as an example, I will explain the estimation methods for water and ammonia (m/z=17), as well as organic substances and argon (m/z=40).

  • Contract Analysis

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[Analysis Case] Evaluation of De-gassing of Resist Film by TDS

Evaluation of gas release components from organic films and temperature dependence assessment are possible with TDS.

TDS is a method that heats samples in high vacuum (1E-7 Pa) and investigates the gases released from the samples using a mass spectrometer. Since it is a vacuum system, it is not suitable for the large release of organic substances, but it can be evaluated by adjusting the sample amount. Below is an example of TDS analysis conducted on a resist film. Desorption gases originating from the resist film, such as organic substances, water, H2S, and SO2, were detected. It was also found that the desorption temperatures varied depending on the components.

  • Contract Analysis

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[Analysis Case] De-gassing Analysis of Hydrogen Terminal Wafers

The hydrogen in the outermost single atomic layer can be evaluated using TDS.

TDS is a method that heats the sample, ionizes the released gases, and performs mass analysis. It can analyze the mass-to-charge ratio (m/z) from 2 to 199 in high vacuum (1E-7 Pa). In this case, we will introduce an example of TDS analysis conducted on a Si chip treated with hydrogen termination. The TDS was able to capture the desorption of hydrogen from the hydrogen-terminated surface.

  • Contract Analysis

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[Analysis Case] De-gassing Evaluation During Temperature Holding by TDS

You can investigate the changes in degassing intensity while maintaining the temperature.

TDS is a method for real-time detection of desorbed gases while heating the sample in high vacuum or maintaining a constant temperature. An example is shown where a SiN film on a Si substrate was held at 350°C to investigate the amount of H2 desorption. In simple heating, a desorption peak was observed around 500°C, but during the temperature hold at 350°C, the detection intensity of H2 decreased, and a desorption peak was observed upon re-heating.

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